GaAs Wafers
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Wafers made of gallium arsenide doped with silicon. They are used in optoelectronics for the manufacture of injection lasers, light and photodiodes, as well as photocathodes.
The size range includes carriers with a thickness of 450 and 625 µm and a diameter of 100 mm.
Wafers made of gallium arsenide doped with silicon. They are used in optoelectronics for the manufacture of injection lasers, light and photodiodes, as well as photocathodes.
The size range includes carriers with a thickness of 450 and 625 µm and a diameter of 100 mm.