Wafers made of gallium arsenide doped with silicon. They are used in optoelectronics for the manufacture of injection lasers, light and photodiodes, as well as photocathodes.
The size range includes carriers with a thickness of 450 and 625 µm and a diameter of 100 mm.
Microwave technology
Optoelectronics and photonics
Semiconductor devices and sensors
Photo-receiving devices (PRDs, MPDRs)
Photovoltaic converters (solar panels)
| Diameter, mm | 100 |
| Thickness, µm | 450; 625 |
| Deviation from nominal value, µm | ± 25 |
| Crystallographic orientation, ° | (100); (100)+10°; (111) А |
| Conductivity type | N |
| Flat orientation | SEMI EJ |
| Polishing | Double-sided |
| Dopant | Si |
| Charge carrier mobility, cm²/V·sec | > 1200 |
| Charge carrier concentration, cm-3 | From 1·10¹⁷ to 3·10¹⁸ |
| Dislocation density, cm-2 | < 500 |
| TTV minimum, µm | 2 |
| TTV minimum/standard, µm | до 5 |