Single crystal gallium arsenide
Monocrystals of silicon-doped gallium arsenide are grown by the VGF method. They feature high n-type conductivity and low dislocation density. They are used for the manufacture of wafers for optoelectronics.
| Growing method | VGF |
| Nominal diameter, mm | 100 |
| Deviation from nominal value, µm | +1/-0 |
| Crystallographic orientation, ° | (100) |
| Conductivity type | N |
| Dopant | Si |
| Charge carrier mobility, cm²/V·sec | > 1200 |
| Charge carrier concentration, cm-3 | From 1·10¹⁷ to 3·10¹⁸ |
| Dislocation density, cm-2 | < 500 |